As semiconductor devices are scaled down,Cu interconnects become the best way due to its good electromigration resistanc......

Cu-based interconnects continue to be used in ultra large integrated circuits (ULSI) due to its low resistivity and impr......

研究通过等离子增强原子层沉积(PEALD)在不同沉积温度下生长的AlN温度对其特性的影响。前驱体是NH3和TMA, 在300 ℃、350 ℃和370 ......

采用等离子体增强原子层沉积(PEALD)技术, 以NH3为掺杂源, 制备了氮δ掺杂Cu2O 薄膜, 研究了N掺杂对Cu2O薄膜表面形貌、光学及电学......